Felser, Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators, arXiv:1502.00604v2 (2015). Zhang, Weak antilocalization effect and high-pressure transport properties of ScPdBi single crystal. Xiu et al., Weak anti-localization and quantum oscillations of surface states in topological insulator Bi 2Se 2Te. Zhang, Weak antilocalization effect and noncentrosymmetric superconductivily in a topologically nontrivial semimetal LuPdBi. Kim, Weak antilocalization, spin-orbit interaction, and phase coherence length of a Dirac semimetal Bi 0.97Sb 0.03. Zhang, Topological insulators in Bi 2Se 3, Bi 2Te 3 and Sb 2Te 3 with a single Dirac cone on the surface. Shen, 2012 Topological insulators: Dirac equation in condensed matter, Spring Series in Solid- State Science 174 Zhang, Topological insulators and superconductors. Kane, Colloquium: Topological insulators. Importantly, this magnetic doping has a strong impact on hostʼs quantum-transport, as there exists a gradual transformation of hostʼs weak anti-localization (WAL) effect into quadratic as well as fluctuating nature in the magneto-conductance (MC) study. Electrical transport indicates the preservation of hostʼs metallic nature for low Mn-doping however, an anomaly in \(\) –T plot at 100 K is noticed for high Mn-doping, which justifies the influence of magnetic dopants in electron transport. However, there exists Griffith phase at low temperatures in the paramagnetic background. The magnetic analysis establishes that the nature of magnetism changes from diamagnetic to paramagnetic with the increment of Mn-content. This phenomenon is also supported by the XPS and HR-TEM study. XRD profiles along with Rietveld refinement infer that, most of the doped-Mn atoms substitute Bi-sites and few Mn-atoms take interstitial positions in host Bi 2Te 3. Bi 2-xMn xTe 3 (where x = 0, 0.05, and 0.25) has been prepared using the programmable heat treatment of vacuum-sealed precursors. In this paper, we have explored the influence of magnetic (Mn) doping on structural, compositional, and magneto-electric transport properties of host Bi 2Te 3. The weak loclaization occurs before Anderson localization, or strong localization, where the wavefucntion exponentially decays.Bi 2Te 3 is one of the favorite materials in material-science community due to its well-known topological and thermoelectric properties. If the interference is constructive (such as conventional electron gas), then the electron tends to stay here and the quantum correction to the Drude conductivity is negative while if the interference is destructive (such as Dirac fermions or spin-orbit coupling induced non-zero Berry phase involved), the quantum correction to the Drude conductivity is positive. The interference between those two loops will give a correction to the conductivity, known as the weak localization/anti-localization. The story is that, we can consider two Feynman paths that are time-reversal partners, i.e., one is clockwise and another is anti-clockwise. There are some other regimes but will not be addressed here. This is the so-called quantum diffusive regime. The mean free path $\ell_$, the total sample is a coherent device, and the electron can maintain its phase coherence even after being scattered for many times.I can help to explain the physical meaning of weak localization.įirst, there are several characteristic lengthes need to be clarified:
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